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| HBR2150 Datasheet, PDF (2/7 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – Low voltage, high frequency rectifier | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
Symbol
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
VRRM
æ大ç´æµé»æçµå
VDC
Maximum DC blocking voltage
æ£åå¹³åæ´æµçµæµTC=125â
Average Rectified Forward Current
IF(AV)
æ£åå³°å¼æµªæ¶çµæµ
Surge non repetitive forward current
IFSM
ï¼é¢å®è´è½½ 8.3ms åæ£å¼¦æ³¢âæ JEDEC æ¹æ³ï¼
8.3 ms single half-sine-wave (JEDEC Method)
æé«ç»æ¸©
Tj
Maximum junction temperature
å¨å温度
Storage temperature range
TSTG
HBR2150
æ°å¼
Value
150
åä½
Unit
V
150
V
2
A
50
A
175
â
-40~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS
项ç®
Parameter
æµè¯æ¡ä»¶
Tests conditions
æå°å¼ å
¸åå¼
æ大å¼
Value(min) Value(typ) Value(max)
åä½
Unit
Tj =25â
IR
VR=VRRM
Tj =125â
10
μA
5
mA
VF
Tj =25â
IF=2A
Tj =125â
0.80
0.9
V
0.70
0.76
V
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
Parameter
Symbol
ç»å°ç¯å¢ççé»
DO-41
Rth(j-a)
Thermal resistance from
DO-15
junction to ambient
SMA
ç»å°ç®¡å£³ççé»
DO-41
Rth(j-c)
Thermal resistance from
DO-15
junction to case
SMA
æå°å¼
Value(min)
æå¤§å¼ å ä½
Value(max) Unit
100
â /W
85
150
50
â /W
40
50
çæ¬(Rev.)ï¼2012403A
2/7
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