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HBR2150 Datasheet, PDF (1/7 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – Low voltage, high frequency rectifier
肖特基势垒二极管
R
SCHOTTKY BARRIER DIODE
HBR2150
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV)
VRRM
Tj
VF(max)
2A
150 V
175 ℃
0.76V (@Tj=125℃)
用途
APPLICATIONS
 低压、高频整流
 Low voltage, high
 低压续流电路和保护电 frequency rectifier
è·¯
 Free wheeling diodes,
polarity protection
applications
DO-41
DO-15
SMA
产品特性
 轴向结构
 低功耗,高效率
 良好的高温特性
 有过压保护环,高可靠性
 环保(RoHS)产品
FEATURES
Axial Lead Rectifier
Low power loss, high efficiency
High Operating Junction
Temperature
Guard ring for overvoltage
protection,High reliability
RoHS product
订货信息 ORDER MESSAGE
订货型号
印记 封装
Order codes
Marking
Package
HBR2150Y
HBR2150 DO-41
HBR2150YR
HBR2150 DO-41
HBR2150Q
HBR2150 DO-15
HBR2150QR
HBR2150 DO-15
HBR2150X
HBR2150 SMA
HBR2150XR
HBR2150 SMA
无卤素
Halogen Free
否 NO
是 YES
否 NO
是 YES
否 NO
是 YES
包
装
Packaging
编带 Tape
编带 Tape
编带 Tape
编带 Tape
编带 Tape
编带 Tape
器件重量
Device Weight
0.28g(approx.)
0.28g(approx.)
0.33g(approx.)
0.33g(approx.)
0.071g(approx.)
0.071g(approx.)
版本(Rev.):201403A
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