2SC5198 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

R
ELECTRICAL CHARACTERISTIC
2SC5198
Parameter
Tests conditions
ICBO
VCB=140V,IE=0
IEBO
VEB=5V,IC=0
V(BR)CEO
Ic=50mA,IB=0
hFE
VCE=5V,IC=1.0A
VCE=5V,IC=5.0A
VCE(sat)
IC=7.0A,IB=0.7A
VBE
VCE=5V,IC=5.0A
fT
VCE=5V, Ic=1.0A
COb
VCE=10V, IE =0,f=1MHz
Value(min) Value(typ) Value(max)
-
-
5.0
-
-
5.0
140
-
-
80
-
160
35
-
-
-
-
2.0
-
-
1.5
-
30
-
-
170
-
Unit
µA
mA
V
-
-
V
V
MHz
pF
THERMAL CHARACTERISTIC
Parameter
Thermal Resistance Junction Case TO-247
Symbo min max Unit
Rth(j-c)
- 0.962 /W
MARKING
201311C
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