2SC5198 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

NPN
Silicon NPN Triple Diffused Transistor
R
2SC5198
V_CEO=140V (min)
2SA1941
70W
RoHS
APPLICATIONS
Power Amplifier Applications
FEATURES
High collector voltage V_CEO=140V (min)
Complementary to 2SA1941
Recommended for 70-W high-fidelity audio
frequency amplifier output
RoHS product
Package
TO-247
1.
BASE
2.
COLLECTOR (HEAT SINK)
3.
EMITTER
不ORDER MESSAGE不
Order codes
Marking Halogen Free Package
2SC5198-O-W-N-B 2SC5198
NO
TO-247
Packaging
Tube
Weight
6.03g(typ)
ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted)
Parameter
Symbol Value
Unit
—
Collector- Base Voltage
V_CBO
140
V
—
Collector- Emitter Voltage
V_CEO
140
V
—
Emitter-Base Voltage
V_EBO
5
V
Collector Current
I_C
15
A
Base Current
I_B
1.5
A
Collector Dissipation(Tc=25 )
P_C
130
W
Junction Temperature
T_j
150
Storage Temperature
T_stg
-55~150
201311C
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