BFG410W_15 Datasheet, PDF (9/12 Pages) NXP Semiconductors – NPN 22 GHz wideband transistor

Philips Semiconductors
NPN 22 GHz wideband transistor
Product specification
BFG410W
SPICE parameters for the BFG410W die
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
19.42 aA
2
BF
145.0 −
3
NF
0.993 −
4
VAF
31.12 V
5
IKF
125.0 mA
6
ISE
123.6 fA
7
NE
3.000 −
8
BR
11.37 −
9
NR
0.985 −
10
VAR
1.874 V
11
IKR
50.00 mA
12
ISC
199.6 aA
13
NC
1.546 −
14
RB
35.00 Ω
15
IRB
0.000 A
16
17
18
19 ⁽¹⁾
20 ⁽¹⁾
21 ⁽¹⁾
RBM
RE
RC
XTB
EG
XTI
15.00 Ω
432.0 mΩ
4.324 Ω
1.500 −
1.110 eV
3.000 −
22
CJE
128.0 fF
23
VJE
900.0 mV
24
MJE
0.346 −
25
TF
4.122 ps
26
XTF
68.20 −
27
VTF
2.004 V
28
ITF
0.627 A
29
PTF
0.000 deg
30
CJC
56.68 fF
31
VJC
556.9 mV
32
33
34 ⁽¹⁾
35 ⁽¹⁾
36 ⁽¹⁾
37 ⁽¹⁾
38
MJC
XCJC
TR
CJS
VJS
MJS
FC
0.207 −
0.500 −
0.000 ns
274.8 fF
418.3 mV
0.239 −
0.550 −
SEQUENCE No. PARAMETER VALUE UNIT
39 ⁽²⁾⁽³⁾
40 ⁽²⁾
41 ⁽³⁾
C_bp
R_sb1
R_sb2
145
fF
25
Ω
19
Ω
Notes
1. These parameters have not been extracted, the
default values are shown.
2. Bonding pad capacity C_bp in series with substrate
resistance R_sb1 between B′ and E′.
3. Bonding pad capacity C_bp in series with substrate
resistance R_sb2 between C′ and E′.
handbook, halfpage
C _cb
L1
B
C _be
B' C'
E'
L2
C
Cce
MGD956
L3
E
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c)
f_c = scaling frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT343R2.
List of components (see Fig.14)
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3 (note 1)
VALUE
80
2
80
1.1
1.1
0.25
UNIT
fF
fF
fF
nH
nH
nH
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
1998 Mar 11
9