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BFG410W_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 22 GHz wideband transistor | |||
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Philips Semiconductors
NPN 22 GHz wideband transistor
Product speciï¬cation
BFG410W
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown
voltage
V(BR)EBO
ICBO
hFE
Cc
Ce
Cre
emitter-base breakdown voltage
collector-base leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
fT
transition frequency
Gmax
maximum power gain; note 1
S21 2
F
insertion power gain
noise ï¬gure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
IC = 2.5 µA; IE = 0
IC = 1 mA; IB = 0
MIN.
10
4.5
IE = 2.5 µA; IC = 0
1
IE = 0; VCB = 4.5 V
â
IC = 10 mA; VCE = 2 V; see Fig.3 50
IE = ie = 0; VCB = 2 V; f = 1 MHz â
IC = ic = 0; VEB = 0.5 V; f = 1 MHz â
IC = 0; VCB = 2 V; f = 1 MHz;
â
see Fig.4
IC = 10 mA; VCE = 2 V; f = 2 GHz; â
Tamb = 25 °C; see Fig.5
IC = 10 mA; VCE = 2 V; f = 2 GHz; â
Tamb = 25 °C; see Figs 7 and 8
IC = 10 mA; VCE = 2 V; f = 2 GHz; â
Tamb = 25 °C; see Fig.8
IC = 1 mA; VCE = 2 V;
â
f = 900 MHz; ÎS = Îopt; see Fig.13
IC = 1 mA; VCE = 2 V; f = 2 GHz; â
ÎS = Îopt; see Fig.13
IC = 10 mA; VCE = 2 V; f = 2 GHz; â
ZS = ZS opt; ZL = ZL opt; note 2
IC = 10 mA; VCE = 2 V; f = 2 GHz; â
ZS = ZS opt; ZL = ZL opt; note 2
TYP.
â
â
â
â
80
220
400
45
22
21
18
0.9
1.2
5
15
MAX. UNIT
â
V
â
V
â
V
15
nA
120
â
fF
â
fF
â
fF
â
GHz
â
dB
â
dB
â
dB
â
dB
â
dBm
â
dBm
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11
4
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