BFG198_2015 Datasheet, PDF (7/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG198
handbook,⁴h⁰alfpage
G _UM
(dB)
30
20
10
0
10
10²
MBB753
10³ _{f (MHz)} 10⁴
I_C = 50 mA; V_CE = 8 V; T_amb = 25 °C;
Fig.8 Maximum gain as a function of frequency.
45
handbook, halfpage
d _im
(dB)
50
MBB498
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 8 V; V_o = 750 mV; T_amb = 25 °C;
f_(p+q−r) = 443.25 MHz.
Fig.9 Intermodulation distortion as a function of
collector current.
handbook,⁴h⁵alfpage
d _im
(dB)
50
MBB266
handbook,³h⁵alfpage
d2
(dB)
40
MBB497
55
45
60
50
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 8 V; V_o = 700 mV; T_amb = 25 °C;
f_(p+q) = 793.25 MHz.
Fig.10 Intermodulation distortion as a function of
collector current.
55
60
20
40
60
80
100
120
I _C (mA)
V_CE = 8 V; V_o = 50 dBmV; T_amb = 25 °C
f_(p+q) = 450 MHz.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 12
7