BFG198_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG198
han_Pd_tb_oo_tok¹, ^.h²alfpage
(W)
1.0
0.8
0.6
0.4
0.2
0
0
50
MBB752
100
150
Ts
(
o
200
C)
Fig.4 Power derating curve.
handboo¹k,⁶h⁰alfpage
h _FE
120
MBB267
80
40
0
40
80
120
I _C (mA)
V_CE = 5 V; T_j = 25 °C.
Fig.5 DC current gain as a function of collector
current.
handbook¹, ^.h²alfpage
C _re
(pF)
0.8
MBB751
0.4
0
0
4
8
12
16
20
VCB (V)
10
handbo_fo_Tk, halfpage
(GHz)
8
6
4
2
0
0
40
MBB499
80 _{IC (mA)} 120
I_E = 0; f = 1 MHz; T_j = 25 °C.
Fig.6 Feedback capacitance as a function of
collector-base voltage.
1995 Sep 12
V_CE = 8 V; f = 1 GHz; T_amb = 25 °C.
Fig.7 Transition frequency as a function of
collector current.
6