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BFR93AW_15 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor
Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR93AW
30
gain
(dB)
20
10
MBG202
MSG
GUM
0
0
10
20
30
IC (mA)
VCE = 8 V; f = 500 MHz.
Fig.6 Gain as a function of collector current;
typical values.
30
gain
(dB)
20
10
MBG201
MSG
GUM
0
0
10
20
30
IC (mA)
VCE = 8 V; f = 1 GHz.
Fig.7 Gain as a function of collector current;
typical values.
50
handbook, halfpage
gain
(dB)
40
GUM
30
MSG
20
10
0
10
102
MBG200
Gmax
103 f (MHz) 104
50
handbook, halfpage
gain
(dB)
40
GUM
30
MSG
20
10
0
10
102
MGB207
Gmax
103
104
f (MHz)
VCE = 8 V; IC = 10 mA.
Fig.8 Gain as a function of frequency;
typical values.
1995 Sep 18
VCE = 8 V; IC = 30 mA.
Fig.9 Gain as a function of frequency;
typical values.
6