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BFR93AW_15 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor | |||
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product speciï¬cation
BFR93AW
FEATURES
⢠High power gain
⢠Gold metallization ensures
excellent reliability
⢠SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
handbook, 2 columns
3
1
2
Top view
MBC870
Marking code: R2.
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
GUM
F
Tj
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
noise ï¬gure
junction temperature
open emitter
open base
up to Ts = 93 °C; note 1
IC = 30 mA; VCE = 5 V
IC = 0; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
IC = 30 mA; VCE = 5 V; f = 500 MHz
IC = 30 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 30 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
IC = 5 mA; VCE = 8 V; f = 1 GHz;
Îs = Îopt
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
â
â
â
â
40
â
TYP.
â
â
â
â
90
0.6
MAX.
15
12
35
300
â
â
UNIT
V
V
mA
mW
pF
4
5
â
GHz
â
13
â
dB
â
8
â
dB
â
1.5
â
dB
â
â
150 °C
1995 Sep 18
2
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