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BFR30-31_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel field-effect transistors | |||
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Philips Semiconductors
N-channel ï¬eld-effect transistors
Product speciï¬cation
BFR30; BFR31
handbook, h6alfpage
ID
(mA)
4
MDA661
VGS = 0 V
â0.5
2
â1.0
â1.5
â2.0
0
25
50
75
100 Tj (°C) 125
BFR30.
VDS = 10 V.
Fig.7 Drain current as a function of junction
temperature; typical values.
handbook, h6alfpage
ID
(mA)
4
VGS =
0V
â0.2
2
â0.4
â0.6
â0.8
â1
0
â1.2
25
50
MDA662
75
100
125
Tj (°C)
BFR31.
VDS = 10 V.
Fig.8 Drain current as a function of junction
temperature; typical values.
10
handbook, halfpage
IGSS
(nA)
1
MDA656
10â1
10â2
10â3
0
50
100
150
200
Tj (°C)
handbook,âh6alfpage
VGS(off)
(V)
â4
MDA663
â2
BFR31
BFR30
0
0
2
4
6
8
10
IDSS (mA)
VGS = â10 V; VDS = 0.
Fig.9 Gate cut-off current as a function of junction
temperature; typical values.
ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj = 25 °C.
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
1997 Dec 05
6
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