BFR30-31_2015 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel field-effect transistors

Philips Semiconductors
N-channel field-effect transistors
Product specification
BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_DS
V_DGO
V_GSO
I_D
I_G
P_tot
T_stg
T_j
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
open source
open drain
T_amb ≤ 40 °C; note 1; see Fig.2
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
CONDITIONS
note 1
MIN.
−
−
−
−
−
−
−65
−
MAX.
±25
−25
−25
10
5
250
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
VALUE
430
UNIT
K/W
handboo³k,⁰h⁰alfpage
Ptot
(mW)
200
MDA245
100
0
0
40
80
120
160
200
Tamb (°C)
Fig.2 Power derating curve.
1997 Dec 05
3