BFQ67_15 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67
handbook, h⁴alfpage
F
(dB)
3
2
MBB308
f = 2 GHz
1 GHz
900 MHz
500 MHz
1
0
1
10
100
IC (mA)
V_CE = 8 V.
Fig.10 Minimum noise figure as a function of
collector current, typical values.
5
handbook, halfpage
F
(dB)
4
3
2
1
0
1
MRA613
ZS _{= 60 Ω}
optimum
source
10
10²
IC (mA)
V_CE = 6 V; f = 900 MHz.
Fig.11 Noise figure as a function of collector
current, typical values.
4
handbook, halfpage
F
(dB)
3
2
1
0
10 ²
MBB309
I _C = 30 mA
15 mA
5 mA
10 ³
10 ⁴
f (MHz)
5
handbook, halfpage
F
(dB)
4
3
2
1
0
10²
MRA612
IC _{= 0.5 mA}
1 mA
2 mA
10³
10⁴
f (MHz)
V_CE = 8 V.
Fig.12 Minimum noise figure as a function of
frequency, typical values.
1998 Aug 27
V_CE = 1 V.
Fig.13 Minimum noise figure as a function of
frequency, typical values.
6