BFQ67_15 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point
note 1
Note
1. T_s is the temperature at the soldering point of the collector lead.
VALUE
260
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
I_CBO
h_FE
C_c
C_e
C_re
f_T
G_UM
F
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
CONDITIONS
I_E = 0; V_CB = 5 V
I_C = 15 mA; V_CE = 5 V
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_C = 0; V_CB = 8 V; f = 1 MHz
I_C = 15 mA; V_CE = 8 V
I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
I_C = 15 mA; V_CE = 8 V; f = 2 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 1 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
I_C = 5 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz; Z_s = 60 Ω
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
I_C = 15 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz; Z_s = 60 Ω
MIN. TYP. MAX. UNIT
−
−
50 nA
60 100 −
−
0.7 −
pF
−
1.3 −
pF
−
0.5 −
pF
−
8
−
GHz
−
14 −
dB
−
8
−
dB
−
1.3 −
dB
−
1.7 −
dB
−
2.2 −
dB
−
2.5 −
dB
−
2.7 −
dB
−
3
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming
S₁₂ is
zero and
G_UM
=
10
log--------------------------^S----²---¹----²------------------------- dB .


1
–
S₁₁
2



1
–
S₂₂
2

1998 Aug 27
3