BFG590_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistors

Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
30
handbook, halfpage
gain
(dB)
20
10
MLC059
G _max
GUM
12
handbook, halfpage
gain
(dB)
8
4
MLC060
G _max
GUM
0
0
20
40
60
80
100
IC (mA)
f = 900 MHz; V_CE = 4 V.
Fig.6 Gain as a function of collector current;
typical values.
0
0
20
40
60
80
100
IC (mA)
f = 2 GHz; V_CE = 4 V.
Fig.7 Gain as a function of collector current;
typical values.
50
hand_gbo_ao_ink, halfpage
(dB)
40
G _UM
MSG
30
20
10
0
10
10²
MLC061
G _max
10³
10⁴
f (MHz)
I_C = 20 mA; V_CE = 4 V.
Fig.8 Gain as a function of frequency;
typical values.
1998 Oct 02
50
hand_gbo_ao_ink, halfpage
(dB)
40 _{G UM}
MSG
30
20
10
0
10
10²
MLC062
G _max
10³
10⁴
f (MHz)
I_C = 80 mA; V_CE = 4 V.
Fig.9 Gain as a function of frequency;
typical values.
6