BFG590_2015 Datasheet, PDF (5/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistors

Philips Semiconductors
NPN 5 GHz wideband transistors
Product specification
BFG590; BFG590/X
handboo²k,⁵h⁰alfpage
hFE
200
150
100
50
0
10^−2
10^−1
1
MRA749
10
10²
IC (mA)
V_CE = 8 V.
Fig.3 DC current gain as a function of collector
current; typical values.
1.2
handbook, halfpage
C _re
(pF)
0.8
MLC057
0.4
0
0
2
4
6
8
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, h⁸alfpage
fT
(GHz)
6
MLC058
4
2
0
10
I _C (mA)
10²
V_{CE =} 4 V; f = 1 GHz.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02
5