BFG520W_2015 Datasheet, PDF (6/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistors

Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
30
handbook, halfpage
gain
(dB)
20
MSG
10
MLB810
G _max
G _UM
30
handbook, halfpage
gain
(dB)
20
MSG
10
MLB811
G _max
G _UM
0
0
10
20
30
40
IC (mA)
f = 900 MHz; V_CE = 6 V.
Fig.6 Gain as a function of collector current;
typical values.
0
0
10
20
30
40
IC (mA)
f = 2 GHz; V_CE = 6 V.
Fig.7 Gain as a function of collector current;
typical values.
50
handbook, halfpage
gain
(dB)
GUM
40
MSG
30
20
10
0
10
10²
MLB812
G _max
10³ _{f (MHz)} 10⁴
I_C = 5 mA; V_CE = 6 V.
Fig.8 Gain as a function of frequency;
typical values.
1998 Oct 02
50
handbook, halfpage
gain
(dB)
GUM
40
MSG
30
20
10
0
10
10²
MLB813
G _max
10³ _{f (MHz)} 10⁴
I_C = 20 mA; V_CE = 6 V.
Fig.9 Gain as a function of frequency;
typical values.
6