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BFG520W_2015 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistors | |||
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Philips Semiconductors
NPN 9 GHz wideband transistors
Product speciï¬cation
BFG520W; BFG520W/X
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO
V(BR)CES
V(BR)EBO
ICBO
hFE
Cre
fT
GUM
|S21|2
F
PL1
ITO
Vo
d2
collector-base breakdown voltage IC =10 µA; IE = 0
20
collector-emitter breakdown voltage IC = 10 µA; RBE = 0
15
emitter-base breakdown voltage IE = 10 µA; IC = 0
2.5
collector leakage current
VCB = 6 V; IE = 0
â
DC current gain
feedback capacitance
IC = 20 mA; VCE = 6 V; see Fig.3 60
IC = 0; VCB = 6 V; f = 1 MHz;
â
see Fig.4
transition frequency
maximum unilateral power gain;
note 1
IC = 20 mA; VCE = 6 V; f = 1 GHz; â
Tamb = 25 °C; see Fig.5
IC = 20 mA; VCE = 6 V; f = 900 MHz; â
Tamb = 25 °C
IC = 20 mA; VCE = 6 V; f = 2 GHz; â
Tamb = 25 °C
insertion power gain
noise ï¬gure
IC = 20 mA; VCE = 6 V; f = 900 MHz; 16
Tamb = 25 °C
Îs = Îopt; IC = 5 mA; VCE = 6 V;
â
f = 900 MHz
Îs = Îopt; IC = 20 mA; VCE = 6 V;
â
f = 900 MHz
Îs = Îopt; IC = 5 mA; VCE = 6 V;
â
f = 2 GHz
output power at 1 dB gain
compression
third order intercept point
IC = 20 mA; VCE = 6 V; f = 900 MHz; â
RL = 50 â¦; Tamb = 25 °C
note 2
â
output voltage
note 3
â
second order intermodulation
note 4
â
distortion
â
â
V
â
â
V
â
â
V
â
50 nA
120 250
0.35 â
pF
9
â
GHz
17 â
dB
11 â
dB
17 â
dB
1.1 1.6 dB
1.6 2.1 dB
1.85 â
dB
17 â
dBm
26 â
275 â
â50 â
dBm
mV
dB
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero. GUM
2. IC = 20 mA; VCE = 6 V; RL = 50 â¦; Tamb = 25 °C;
=
10
log -(---1-----â------S----1---1----S2---)-2---1(---1-2----â------S----2--2-----2---)-
dB.
fp = 900 MHz; fq = 902 MHz; measured at 2fp â fq = 898 MHz and 2fq â fp = 904 MHz.
3. dim = â60 dB (DIN45004B); IC = 20 mA; VCE = 6 V; Vp = Vo; Vq = Vo â6 dB; Vr = Vo â6 dB; RL = 75 â¦;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at fp + fq â fr = 793.25 MHz.
4. IC = 20 mA; VCE = 6 V; Vo = 75 mV; RL = 75 â¦; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz.
1998 Oct 02
4
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