BFG10WX_2015 Datasheet, PDF (6/9 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BFG10W/X
List of components (see Fig.6)
COMPONENT
TR1
C1, C4, C7
C2
C3
C5
C6
C8
C9
L1
L4
L2, L3
R1
R2
R3
DESCRIPTION
bias transistor, BC548 or equivalent
capacitor; notes 2 and 3
capacitor; note 2
capacitor; note 2
capacitor; note 2
capacitor; note 2
Philips multilayer capacitor
Philips capacitor
6 turns enamelled 0.7 mm copper wire
2 turns enamelled 0.7 mm copper wire
RF choke, Philips
metal film resistor
metal film resistor
metal film resistor
VALUE
note 1
120 pF
6.8 pF
0.5 pF
1.2 pF
1.9 pF
1 nF, 10 V
1500 µF, 10 V
DIMENSIONS
length 3.5 mm
length 3 mm
275 Ω
100 Ω
10 Ω
Notes
1. V_BE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
CATALOGUE No.
2222 032 14152
4312 020 36690
handbook, full pagewidth
+Vbias
R1
R2
TR1
L2
+VCC
C9
R3
L3
C8
C4
L1
C1
C2 C3
DUT
L4
C5 C6
C7
MBG428
PCB RT5880, thickness 0.79 mm.
Fig.6 Class-AB test circuit at f = 900 MHz.
1995 Sep 22
6