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BFG10WX_2015 Datasheet, PDF (3/9 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF power transistor | |||
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Philips Semiconductors
UHF power transistor
Product speciï¬cation
BFG10W/X
CHARACTERISTICS
Tj = 25 °C (unless otherwise speciï¬ed).
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
hFE
Cc
Cre
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
open emitter; IC = 0.1 mA
open base; IC = 5 mA
open collector; IE = 0.1 mA
VCE = 6 V; VBE = 0
IC = 50 mA; VCE = 5 V
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCE = 6 V; f = 1 MHz
MIN.
20
10
2.5
â
25
â
â
MAX.
â
â
â
100
â
3
2
UNIT
V
V
V
µA
pF
pF
handbook1, 0fu3ll pagewidth
Zth j-a
(K/W)
102
10
δ=1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
1
10â6
10â5
10â4
10â3
MBG431
10â2
P
δ
=
tp
T
tp
t
T
10â1
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
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