BFS520_2015 Datasheet, PDF (5/11 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS520
In Figs 6 to 9, G_UM = maximum unilateral power gain;
MSG = maximum stable gain; G_max = maximum available
gain.
20
hand_Gb_Uoo_Mk, halfpage
(dB)
18
MRC027
16
VCE = 6 V
3V
14
12
10
0
10
20
V_CE = 6 V; f = 900 MHz; T_amb = 25 °C.
30
IC (mA)
Fig.6 Maximum unilateral power gain as a
function of collector current.
25
handbook, halfpage
gain
(dB)
20
15
10
MRC026
MSG
G _max
G _UM
5
0
0
10
20
30
IC (mA)
V_CE = 6 V; f = 2 GHz; T_amb = 25 °C.
Fig.7 Gain as a function of collector current.
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10^−2
G _UM
MSG
10^−1
MRC024
G _max
1
10
f (GHz)
I_C = 5 mA; V_CE = 6 V; T_amb = 25 °C.
Fig.8 Gain as a function of frequency.
September 1995
handbook, ⁵ha⁰lfpage
gain
(dB)
40
G _UM
30
MSG
MRC025
20
G _max
10
0
10^−2
10^−1
1 _{f (GHz)} 10
I_C = 20 mA; V_CE = 6 V; T_amb = 25 °C.
Fig.9 Gain as a function of frequency.
5