BFS520_2015 Datasheet, PDF (2/11 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS520
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
PINNING
PIN
DESCRIPTION
Code: N2
1 base
2 emitter
3 collector
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CES
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
CONDITIONS
open emitter
R_BE = 0
up to T_s = 118 °C; note 1
I_C = 20 mA; V_CE = 6 V; T_j = 25 °C
I_C = 20 mA; V_CE = 6 V; f = 1 GHz;
T_amb = 25 °C
I_c = 20 mA; V_CE = 6 V; f = 900 MHz;
T_amb = 25 °C
I_c = 5 mA; V_CE = 6 V; f = 900 MHz;
T_amb = 25 °C
MIN.
−
−
−
−
60
−
−
−
TYP.
−
−
−
−
120
9
15
1.1
MAX. UNIT
20
V
15
V
70
mA
300 mW
250
−
GHz
−
dB
1.6 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
R_BE = 0
open collector
up to T_s = 118 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
70
300
150
175
UNIT
V
V
V
mA
mW
°C
°C
September 1995
2