BFG94_2015 Datasheet, PDF (5/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFG94
+VBB
input
75 Ω
10 kΩ
L2
L1
1 nF
247 Ω
L3
1 nF
1 nF
DUT
+VCC
output
75 Ω
2 pF
33 Ω
33 Ω
MBB780
L1 = L3 = 5 µH micro-choke.
L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.
Fig.2 Test circuit for second and third order
intermodulation distortion.
DUT
TEST
FIXTURE
BIAS
INPUT SLUG TUNER _TEE
OUTPUT SLUG TUNER
BIAS
TEE
input
output
MBB789
Fig.3 Measurement set-up for third order
intercept point and 1 dB gain compression.
handboo⁸k,⁰h⁰alfpage
P _tot
(mW)
600
MBB790
400
200
0
0
50
100
150
200
Ts (°C)
Fig.4 Power derating curve.
handbook¹,²h⁰alfpage
h _FE
80
MCD087
40
0
0
10
V_CE = 10 V; T_j = 25 °C
20 _{IC (mA)} 30
Fig.5 DC current gain as a function of collector
current.
September 1995
5