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BFG94_2015 Datasheet, PDF (3/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor | |||
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Philips Semiconductors
NPN 6 GHz wideband transistor
Product speciï¬cation
BFG94
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to Ts = 140 °C (note 1)
MIN. MAX. UNIT
â
15
V
â
12
V
â
2
V
â
60
mA
â
700 mW
â65 150 °C
â
175 °C
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 140 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
50 K/W
September 1995
3
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