BFG403W_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN 17 GHz wideband transistor

Philips Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
handbook¹,²h⁰alfpage
hFE
80
40
MGG678
(1)
(2)
(3)
0
0
2
(1) V_CE = 3 V.
(2) V_CE = 2 V.
(3) V_CE = 1 V.
4
6
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
handbo_Co_rk_e,⁵h⁰alfpage
(fF)
40
MGG679
30
20
10
0
0
1
2
3
4
5
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook,²h⁰alfpage
fT
(GHz)
16
12
8
4
0
1
MGG680
IC (mA)
10
V_CE = 2 V; f = 2 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Mar 11
30
handbook, halfpage
MSG
(dB)
20
MGG709
10
0
0
2
4
6
IC (mA)
V_CE = 2 V; f = 900 MHz.
Fig.6 Maximum stable gain as a function of
collector current; typical values.
5