BFG403W_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 17 GHz wideband transistor

Philips Semiconductors
NPN 17 GHz wideband transistor
Product specification
BFG403W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE
C_c
C_e
C_re
collector-base breakdown voltage I_C = 2.5 µA; I_E = 0
collector-emitter breakdown voltage I_C = 1 mA; I_B = 0
emitter-base breakdown voltage I_E = 2.5 µA; I_C = 0
collector-base leakage current
I_E = 0; V_CB = 4.5 V
DC current gain
I_C = 3 mA; V_CE = 2 V; see Fig.3
collector capacitance
I_E = i_e = 0; V_CB = 2 V; f = 1 MHz
emitter capacitance
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
feedback capacitance
I_C = 0; V_CB = 2 V; f = 1 MHz;
see Fig.4
10 −
−
V
4.5 −
−
V
1
−
−
V
−
−
15 nA
50 80 120
−
170 −
fF
−
315 −
fF
−
20 −
fF
f_T
G_max
transition frequency
maximum power gain; note 1
S₂₁ ²
insertion power gain
F
noise figure
P_L1
output power at 1 dB gain
compression
ITO
third order intercept point
I_C = 3 mA; V_CE = 2 V; f = 2 GHz;
−
T_amb = 25 °C; see Fig.5
I_C = 0.5 mA; V_CE = 1 V; f = 900 MHz; −
T_amb = 25 °C; see Figs 6 and 8
I_C = 3 mA; V_CE = 2 V; f = 2 GHz;
−
T_amb = 25 °C; see Figs 7 and 8
I_C = 0.5 mA; V_CE = 1 V; f = 900 MHz; −
T_amb = 25 °C; see Fig.8
I_C = 3 mA; V_CE = 2 V; f = 2 GHz;
−
T_amb = 25 °C; see Fig.8
I_C = 1 mA; V_CE = 2 V; f = 900 MHz; −
Γ_S = Γ_opt; see Fig.13
I_C = 1 mA; V_CE = 2 V; f = 2 GHz;
−
Γ_S = Γ_opt; see Fig.13
I_C = 1 mA; V_CE = 1 V; f = 900 MHz; −
Z_S = Z_{S opt}; Z_L = Z_{L opt}; note 2
I_C = 1 mA; V_CE = 1 V; f = 900 MHz; −
Z_S = Z_{S opt}; Z_L = Z_{L opt}; note 2
17 −
20 −
22 −
5
−
14 −
1
−
1.6 −
−5 −
6
−
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
Notes
1. G_max is the maximum power gain, if K > 1. If K < 1 then G_max = MSG; see Figs 6, 7 and 8.
2. Z_S is optimized for noise; Z_L is optimized for gain.
1998 Mar 11
4