BFS17A_2015 Datasheet, PDF (4/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 3 GHz wideband transistor

Philips Semiconductors
NPN 3 GHz wideband transistor
Product specification
BFS17A
handbook, full pagewidth
VBB
75 Ω
input
1.5 nF
10 kΩ
L1
1 nF
L2
270 Ω
L3
1 nF
1.5 nF
VCC
1 nF
75 Ω
output
DUT
3.3 pF
18 Ω 0.68 pF
MBB251
L1 = L3 = 5 µH Ferroxcube choke.
L2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm.
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
handboo¹k,⁰h⁰alfpage
hFE
50
MEA395
handbook, h¹alfpage
Cc
(pF)
0.5
MEA903
0
0
10
20
30
IC (mA)
V_CE = 1 V; T_amb = 25 °C.
Fig.3 DC current gain as a function of
collector current.
September1995
0
0
4
8
12
16
VCB (V)
I_E = 0; f = 1 MHz; T_amb = 25 °C.
Fig.4 Collector capacitance as a function of
collector-base voltage.
4