BFS17A_2015 Datasheet, PDF(3/6 Page) Quanzhou Jinmei Electronic Co.,Ltd.

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BFS17A_2015 Datasheet, PDF (3/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 3 GHz wideband transistor

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Philips Semiconductors

NPN 3 GHz wideband transistor

Product speciï¬cation

BFS17A

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point up to Ts = 70 Â°C; note 1

Note

1. Ts is the temperature at the soldering point of the collector pin.

VALUE

260

UNIT

K/W

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

ICBO

collector cut-off current

hFE

DC current gain

transition frequency

collector capacitance

emitter capacitance

Cre

feedback capacitance

GUM

maximum unilateral power gain

note 1

noise ï¬gure

output voltage

CONDITIONS

MIN.

IE = 0; VCB = 10 V

IC = 2 mA; VCE = 1 V; Tamb = 25 Â°C 25

IC = 25 mA; VCE = 1 V; Tamb = 25 Â°C 25

IC = 25 mA; VCE = 5 V; f = 500 MHz; â

Tamb = 25 Â°C

IE = 0; VCB = 10 V; f = 1 MHz;

Tamb = 25 Â°C

IC = 0; VEB = 0.5 V; f = 1 MHz

IC = 0; VCE = 5 V; f = 1 MHz

IC = 14 mA; VCE = 10 V; f = 800 MHz â

IC = 2 mA; VCE = 5 V; ZS = 60 â¦;

f = 800 MHz; Tamb = 25 Â°C

note 2

TYP.

2.8

0.7

1.25

0.6

13.5

2.5

150

MAX. UNIT

GHz

Notes

GUM is the maximum unilateral power gain, assuming

S12 is

zero and

GUM

10 log--------------------------S----2---1----2-------------------------

ï£«

ï£

S11

2ï£¶

ï£¸

ï£«

ï£

S22

2ï£¶

ï£¸

dB.

2. dim = â60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 â¦; Tamb = 25 Â°C;

Vp = VO; fp = 795.25 MHz;

Vq = VO â6 dB; fq = 803.25 MHz;

Vr = VO â6 dB; fr = 805.25 MHz;

measured at f(p+qâr) = 793.25 MHz.

September1995

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