BFR520T_15 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520T
200
Ptot
(mW)
150
MGU068
100
50
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating curve.
200
handbook, halfpage
h _FE
150
MRC028
100
50
0
10^−2
10^−1
1
10
10²
IC (mA)
V_CE = 6 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook⁰, h^.7alfpage
C _re
(pF) _0.6
MRC021
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
2000 Apr 03
12
handb_fo_Tok, halfpage
(GHz)
10
8
6
4
2
0
1
MRC022
VCE = 8 V
3V
10
100
IC (mA)
f = 1 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
4