BFR520T_15 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
h_FE
DC current gain
C_e
emitter capacitance
C_c
collector capacitance
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power
gain; note 1
s₂₁²
F
insertion power gain
noise figure
P_L1
output power at 1 dB gain
compression
ITO
third order intercept point
CONDITIONS
I_E = 0; V_CE = 6 V
I_C = 20 mA; V_CE = 6 V
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_E = i_e = 0; V_CB = 6 V; f = 1 MHz
I_C = 0; V_CB = 6 V; f = 1 MHz
I_C = 20 mA; V_CE = 6 V; f = 1 GHz;
T_amb = 25 °C
I_C = 20 mA; V_CE = 6 V; f = 900 MHz;
T_amb = 25 °C
I_C = 20 mA; V_CE = 6 V; f = 2 GHz;
T_amb = 25 °C
I_C = 20 mA; V_CE = 6 V; f = 900 MHz;
T_amb = 25 °C
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 6 V;
f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = 20 mA; V_CE = 6 V;
f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 6 V;
f = 2 GHz; T_amb = 25 °C
I_C = 20 mA; V_CE = 6 V; R_L = 50 Ω;
f = 900 MHz; T_amb = 25 °C
note 2
Notes
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero and
G_UM = 10 log -₍--1-----_–------s---₁---₁---s-₂---²₎--₍¹---1-²---_–------s----₂--₂----₂----₎ dB
MIN. TYP. MAX. UNIT
−
−
50 nA
60 120 250
−
1
−
pF
−
0.5 −
pF
−
0.4 −
pF
−
9
−
GHz
−
15 −
dB
−
9
−
dB
13 14 −
dB
−
1.1 1.6 dB
−
1.6 2.1 dB
−
1.9 −
dB
−
17 −
dBm
−
26 −
dBm
2. I_C = 20 mA; V_CE = 6 V; R_L = 50 Ω; f = 900 MHz; T_amb = 25 °C; f_p = 900 MHz; f_q = 902 MHz; measured at
f_(2p−q) = 898 MHz and at f_(2q−p) = 904 MHz.
2000 Apr 03
3