BFQ19_2015 Datasheet, PDF (4/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFQ19
120
handbook, halfpage
h _FE
80
MBB774
40
0
0
40
80
120
I _C (mA)
V_CE = 10 V; T_j = 25 °C.
Fig.2 DC current gain as a function of collector
current.
handbook, h⁵alfpage
Cc
(pF)
4
MBB830
3
2
1
0
0
5
10
15
20
V _CB (V)
I_E = i_e = 0; f = 1 MHz; T_j = 25 °C.
Fig.3 Collector capacitance as a function of
collector-base voltage.
8
handbook, halfpage
fT
(GHz)
6
MBB773
4
2
0
0
40
80 _{I C (mA)} 120
V_CE = 10 V; f = 500 MHz; T_j = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
4