BFQ19_2015 Datasheet, PDF (3/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFQ19
THERMAL RESISTANCE
SYMBOL
R_{th j-s}
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T_s = 145 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
30 K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
h_FE
C_c
C_e
C_re
f_T
G_UM
F
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
I_E = 0; V_CB = 10 V
I_C = 70 mA; V_CE = 10 V
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_C = 10 mA; V_CE = 10 V; f = 1 MHz;
T_amb = 25 °C
I_C = 70 mA; V_CE = 10 V; f = 500 MHz
I_C = 50 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 °C
I_C = 50 mA; V_CE = 10 V;
f = 800 MHz; T_amb = 25 °C
I_C = 50 mA; V_CE = 10 V; Z_s = opt.;
f = 500 MHz; T_amb = 25 °C
Note
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and
G_UM = 10 log -_---₁-----–------_S----₁---₁----₂^S---_-²--_-¹---₁-²----–------_S----₂--₂-----₂--_-- dB.
MIN. TYP. MAX. UNIT
−
−
100 nA
25 80 −
−
1.6 −
pF
−
5
−
pF
−
1.3 −
pF
4.4 5.5 −
−
11.5 −
GHz
dB
−
7.5 −
dB
−
3.3 −
dB
September 1995
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