BFG310_15 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 14 GHz wideband transistor

Philips Semiconductors
BFG310/XR
NPN 14 GHz wideband transistor
70
P_tot
(mW)
60
50
40
30
20
10
0
0
50
100
Fig 1. Power derating curve
001aac169
150
200
T_sp (°C)
0.20
C_CBS
(pF)
0.19
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0.18
0.17
0.16
0.15
0
1
2
3
4
5
V_CB (V)
I_C = 0 mA; f = 1 MHz.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values
10
I_C
(mA)
8
6
4
2
I_B = 120 µA
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100 µA
80 µA
60 µA
40 µA
20 µA
0
0
1
2
3
4
5
6
V_CE (V)
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
40
G
(dB)
30
MSG
001aac172
s₂₁ ²
20
10
0
10
10²
10³
10⁴
f (MHz)
I_C = 5 mA; V_CE = 3 V.
Fig 4. Gain as a function of frequency; typical values
9397 750 14244
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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