BFG310_15 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 14 GHz wideband transistor

Philips Semiconductors
BFG310/XR
NPN 14 GHz wideband transistor
Table 1: Quick reference data …continued
Symbol Parameter
Conditions
MSG
|s₂₁|²
NF
maximum stable gain
insertion power gain
noise figure
I_C = 5 mA; V_CE = 3 V;
f = 1.8 GHz; T_amb = 25 °C
I_C = 5 mA; V_CE = 3 V;
f = 1.8 GHz; T_amb = 25 °C;
Z_S = Z_L = 50 Ω
Γ_s = Γ_opt; I_C = 1 mA;
V_CE = 3 V; f = 2 GHz
[1] T_sp is the temperature at the soldering point of the collector pin.
2. Pinning information
Min Typ Max Unit
-
18 -
dB
-
14 -
dB
-
1
-
dB
Table 2:
Pin
1
2
3
4
Pinning
Description
collector
emitter
base
emitter
Simplified outline Symbol
3
4
1
2
1
3
2, 4
sym086
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
BFG310/XR
SC-61AA plastic surface mounted package; reverse pinning;
4 leads
4. Marking
Table 4: Marking codes
Type number
BFG310/XR
[1] * = p: made in Hong Kong.
Marking code ^[1]
S1*
Version
SOT143R
9397 750 14244
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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