BF862_2015 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel junction FET

Philips Semiconductors
N-channel junction FET
Product specification
BF862
STATIC CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)GSS
V_GS
V_GSoff
I_GSS
I_DSS
gate-source breakdown voltage
gate-source forward voltage
gate-source cut-off voltage
reverse gate current
drain-source current
I_GS = −1 µA; V_DS = 0
V_DS = 0; I_G = 1 mA
V_DS = 8 V; I_D = 1 µA
V_GS = −15 V; V_DS = 0
V_GS = 0; V_DS = 8 V
MIN.
−20
−
−0.3
−
10
TYP.
−
−
−0.8
−
−
MAX.
−
1
−1.2
−1
25
UNIT
V
V
V
nA
mA
DYNAMIC CHARACTERISTICS
Common source; T_amb = 25 °C; V_GS = 0; V_DS = 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
y_fs
g_os
C_iss
C_rss
e_n
f_T
common source forward transfer
admittance
common source output conductance
input capacitance
reverse transfer capacitance
equivalent noise input voltage
transition frequency
T_j = 25 °C
T_j = 25 °C
f = 1 MHz
f = 1 MHz
f = 100 kHz
MIN.
35
−
−
−
−
−
TYP.
45
180
10
1.9
0.8
715
MAX. UNIT
−
mS
400 µS
−
pF
−
pF
−
nV/√Hz
−
MHz
2000 Jan 05
4