BF862_2015 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel junction FET

Philips Semiconductors
N-channel junction FET
Product specification
BF862
FEATURES
• High transition frequency for excellent sensitivity in
AM car radios
• High transfer admittance.
APPLICATIONS
• Pre-amplifiers in AM car radios.
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable.
PINNING SOT23
PIN
1
source
2
drain
3
gate
DESCRIPTION
handbook, halfpa2ge
1
d
g
s
3
Top view
MAM036
Marking code: 2Ap.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
V_DS
V_GSoff
I_DSS
P_tot
y_fs
T_j
PARAMETER
drain-source voltage
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
junction temperature
CONDITIONS MIN.
−
−0.3
10
T_s ≤ 90 °C
−
35
−
TYP.
−
−0.8
−
−
45
−
MAX. UNIT
20
V
−1.2 V
25
mA
300 mW
−
mS
150 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Jan 05
2