BFS540_15 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS540
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point T_s ≤ 80 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
VALUE
190
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
h_FE
C_e
C_c
C_re
f_T
G_UM
|s₂₁|²
F
P_L1
ITO
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
I_E = 0; V_CE = 8 V
I_C = 40 mA; V_CE = 8 V
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz
I_E = i_e = 0; V_CB = 8 V; f = 1 MHz
I_C = 0; V_CB = 8 V; f = 1 MHz
I_C = 40 mA; V_CE = 8 V; f = 1 GHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 2 GHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz;
T_amb = 25 °C
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = 40 mA; V_CE = 8 V;
f = 900 MHz; T_amb = 25 °C
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
f = 2 GHz; T_amb = 25 °C
I_c = 40 mA; V_CE = 8 V; R_L = 50 Ω;
f = 900 MHz; T_amb = 25 °C
note 2
MIN. TYP. MAX. UNIT
−
−
50 nA
100 120 250
−
2
−
pF
−
0.9 −
pF
−
0.6 −
−
9
−
pF
GHz
−
14 −
dB
−
8
−
dB
12 13 −
dB
−
1.3 1.8 dB
−
1.9 2.4 dB
−
2.1 −
dB
−
21 −
dBm
−
34 −
dBm
Notes
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero and
G_UM = 10 log ₍---₁-----–------_s---₁---₁---^s-₂---²₎--₍¹---₁-²---–------_s----₂--₂----₂----₎ dB.
2. I_C = 40 mA; V_CE = 8 V; R_L = 50 Ω; f = 900 MHz; T_amb = 25 °C;
f_p = 900 MHz; f_q = 902 MHz; measured at f_(2p−q) = 898 MHz and at f_(2q−p) = 904 MHz.
2000 May 30
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