BFS540_15 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS540
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 package.
APPLICATIONS
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
DESCRIPTION
NPN transistor in a SOT323 plastic
package.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
handbook, 2 columns
3
1
Top view
2
MBC870
Marking code: N4.
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
G_UM
F
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
open emitter
open base
T_s ≤ 80 °C; note 1
I_C = 40 mA; V_CE = 8 V; T_j = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 1 GHz;
T_amb = 25 °C
I_C = 40 mA; V_CE = 8 V; f = 900 MHz;
T_amb = 25 °C
I_C = 10 mA; V_CE = 8 V; f = 900 MHz;
T_amb = 25 °C
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN. TYP. MAX. UNIT
−−
20 V
−−
15 V
−−
120 mA
−−
500 mW
100 120 250
−9
−
GHz
− 14 −
dB
− 1.3 1.7 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
R_BE = 0
open collector
T_s ≤ 80 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
2000 May 30
2
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
120
500
150
175
UNIT
V
V
V
mA
mW
°C
°C