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| BFS17_15 Datasheet, PDF (3/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 1 GHz wideband transistor | |||
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Philips Semiconductors
NPN 1 GHz wideband transistor
Product speciï¬cation
BFS17
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point up to Ts = 70 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
260
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
F
noise ï¬gure
CONDITIONS
IE = 0; VCB = 10 V
IC = 2 mA; VCE = 1 V
IC = 25 mA; VCE = 1 V
IC = 2 mA; VCE = 5 V; f = 500 MHz
IC = 25 mA; VCE = 5 V; f = 500 MHz
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 1 mA; VCE = 5 V; f = 1 MHz
IC = 2 mA; VCE = 5 V; RS = 50 â¦;
f = 500 MHz
MIN.
â
25
25
â
â
â
â
â
â
TYP.
â
90
90
1
1.6
0.8
â
0.65
4.5
MAX.
10
â
â
â
â
1.5
2
â
â
UNIT
nA
GHz
GHz
pF
pF
pF
dB
September 1995
3
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