BFS17_15 Datasheet, PDF (2/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 1 GHz wideband transistor

Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFS17
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
• A wide range of RF applications such as:
– Mixers and oscillators in TV tuners
– RF communications equipment.
PINNING
PIN
1
base
2
emitter
3
collector
DESCRIPTION
handbook, halfpage
3
1
Top view
2
MSB003
Marking code: E1p.
Fig.1 SOT23.
QUICK REFERENCED DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
f_T
F
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
noise figure
open emitter
open base
CONDITIONS
up to T_s = 70 °C; note 1
I_C = 25 mA; V_CE = 5 V; f = 500 MHz; T_j = 25 °C
I_C = 2 mA; V_CE = 5 V; R_S = 50 Ω; f = 500 MHz;
T_j = 25 °C
TYP.
−
−
−
−
1
4.5
MAX.
25
15
25
300
−
−
UNIT
V
V
mA
mW
GHz
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 70 °C; note 1
Note to the Quick reference data and the Limiting values
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−
−65
−
MAX.
25
15
2.5
25
50
300
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
September 1995
2