MJW16018 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
MJW16018
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
V_CEO(SUS) Collector-emitter sustaining voltage
V_CEsat-1 Collector-emitter saturation voltage
CONDITIONS
I_C=50mA; I_B=0
I_C=5A ;I_B=2A
T_C=110
V_CEsat-2
V_BEsat
I_CEV
I_CER
I_EBO
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I_C=10A I_B=5A
I_C=5A ;I_B=2A
T_C=110
V_CEV=1500V,V_BE(off)=1.5Vdc
T_C=100
V_CE=1500V; R_BE=50
T_C=100
V_EB=6V; I_C=0
h_FE
DC current gain
I_C=5A ; V_CE=5V
C_OB
Collector outoput capacitance
f=1kHz ; V_CB=10V
Switching times resistive load
t_d
Delay time
t_r
Rise time
t_s
Storage time
t_f
Fall time
I_C=5A; I_B1= I_B2=2.0A
V_CC=250V ,R_B2=3
PW=25 s
Duty Cycle 2%
MIN TYP. MAX UNIT
800
V
1.0
1.5
V
5.0
V
1.5
1.5
V
0.25
1.50
mA
2.5
mA
0.1
mA
4
450
pF
0.085 0.2
s
0.90 2.0
s
4.5
9.0
s
0.2
0.4
s
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