MJW16018 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
www.jmnic.com
MJW16018
DESCRIPTION
With TO-247 package
High voltage ,high speed
APPLICATIONS
Designed for high–voltage, high–speed,
power switching in inductive circuits where
fall time is critical. Particularly suited for
line–operated switchmode applications.
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
I_BM
Base current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_C=100
VALUE
1500
800
6
10
15
8
12
125
50
150
-55~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
1.0
UNIT
/W
JMnic