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| MJE18006_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
MJE18006
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
VCEsat-1 Collector-emitter saturation voltage
VCEsat-2 Collector-emitter saturation voltage
CONDITIONS
IC=0.1A; L=25mH
IC=1.3A ;IB=0.13A
TC=125
IC=3A ;IB=0.6A
TC=125
VBEsat-1
VBEsat-2
Emitter-base saturation voltage
Emitter-base saturation voltage
IC=1.3A; IB=0.13A
IC=3A; IB=0.6A
ICES
Collector cut-off current
ICEO
Collector cut-off current
VCES=RatedVCES;
VEB=0
VCES=800V
TC=125
VCE=RatedVCEO; IB=0
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=1V
hFE-3
DC current gain
IC=1.3A ; VCE=1V
hFE-4
DC current gain
IC=10mA ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
COB
Collector outoput capacitance
f=1MHz ; VCB=10V;f=1.0MHz
Switching times resistive load,Duty Cycle 10%,Pulse Width=20 s
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=3A
IB1=0.6A; IB2=1.5A
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=1.3A
IB1=0.13A; IB2=0.65A
MIN TYP. MAX UNIT
450
V
0.6
V
0.65
0.7
V
0.8
1.2
V
1.3
V
0.1
0.5
mA
0.1
0.1
mA
0.1
mA
14
34
6
11
10
14
MHz
75
pF
90
ns
1.7
2.5
s
0.2
0.3
s
1.2
2.5
s
JMnic
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