MJE18006_15 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
DESCRIPTION
With TO-220C package
High voltage ,high speed
Improved efficiency due to low base
drive requirements:
-High and flat DC current gain h_FE
-Fast switching
APPLICATIONS
Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
I_BM
Base current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
R_{th j-A}
Thermal resistance junction to ambient
JMnic
www.jmnic.com
MJE18006
VALUE
1000
450
9
6
15
4
8
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.25
62.5
UNIT
/W
/W