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| MJE15029 Datasheet, PDF (2/4 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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Product Specification
Silicon PNP Power Transistors
www.jmnic.com
MJE15029
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-2V
ICBO
Collector cut-off current
VCB=-120V; IE=0
ICEO
Collector cut-off current
VCE=-120V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-2A ; VCE=-2V
hFE-3
DC current gain
IC=-3A ; VCE=-2V
hFE-4
DC current gain
IC=-4A ; VCE=-2V
fT
Transition frequency
IC=0.5A;VCE=-10V;f=10MHz
MIN TYP. MAX UNIT
-120
V
-0.5
V
-1.0
V
-10
A
-0.1
mA
-10
A
40
40
40
20
30
MHz
2
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