MJE15029 Datasheet, PDF (1/4 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Product Specification
Silicon PNP Power Transistors
DESCRIPTION
With TO-220C package
Complement to type MJE15028
High transition frequency
DC Current Gain Specified to 4.0 Amperes
h_FE = 40 (Min) @ I_C =- 3.0 Adc
h_FE = 20 (Min) @ I_C = -4.0 Adc
APPLICATIONS
Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance ; junction to case
R_{th j-A}
Thermal resistance , junction to ambient
www.jmnic.com
MJE15029
VALUE
-120
-120
-5
-8
-16
-2
2
50
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.5
62.5
UNIT
/W
/W