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| BUW24_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon Power Transistors | |||
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Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=4A IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A IB=0.8A
ICBO
Collector cut-off current
VCB=450V IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
IC=5A IB1=- IB2=0.5A
RL=10
tf
Fall time
www.jmnic.com
BUW24
MIN
TYP.
MAX
UNIT
350
V
0.8
V
1.5
V
0.1
mA
0.1
mA
10
80
15
2.0
s
4.0
s
1.2
s
JMnic
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