BUW24_2015 Datasheet, PDF (1/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon Power Transistors

Product Specification
Silicon Power Transistors
DESCRIPTION
Short switching time
High dielectric strength
With TO-3 package
APPLICATIONS
Suitable for use in clocked
voltatge converters
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
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BUW24
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_mb 25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
VALUE
450
350
7
10
3
100
150
-65~150
UNIT
V
V
V
A
A
W
VALUE
1.25
UNIT
K/W
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