BFG97_15 Datasheet, PDF (2/14 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG97
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It features excellent output voltage
capabilities, and is primarily intended
for use in MATV applications.
PNP complement is the BFG31.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
age
4
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
V_o
output voltage
CONDITIONS
open emitter
open base
up to T_s = 125 °C (note 1)
I_C = 70 mA; V_CE = 10 V; T_j = 25 °C
I_C = 70 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 °C
I_C = 70 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 °C
I_C = 70 mA; V_CE = 10 V;
f = 800 MHz; T_amb = 25 °C
I_C = 70 mA; V_CE = 10 V;
d_{im =} −60 dB; R_L = 75 Ω;
f_(p+q−r) = 793.25 MHz; T_amb = 25 °C
MIN. TYP. MAX. UNIT
−
−
20
V
−
−
15
V
−
−
100 mA
−
−
1
W
25 80 −
−
5.5 −
GHz
−
16 −
dB
−
12 −
dB
−
700 −
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 125 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
3
100
1
150
175
UNIT
V
V
V
mA
W
°C
°C
September 1995
2