BFG97_15 Datasheet, PDF (10/14 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG97
handbook,⁸h⁰alfpage
η
(%)
70
60
50
MEA961
VCE = 6 V
7.5 V
10 V
40
0
0.5
1 _{POUT (W)} 1.5
f = 900 MHz.
Fig.18 Efficiency as a function of output power.
1.5
handbook, halfpage
P _OUT
(W)
1
0.5
MEA962
VCE =
10 V
7.5 V
6V
0
0
100
200
300
PIN (mW)
f = 900 MHz.
Fig.19 Output power as a function of input power.
10
handbook, halfpage
Gp
(dB)
8
6
4
2
MEA960
VCE =
10 V
7.5 V
6V
0
0
0.5
1 _{POUT (W)} 1.5
f = 900 MHz.
Fig.20 Power gain as a function of output power.
handbook,⁵h⁰alfpage
G _UM
(dB)
40
MBB802
30
20
10
0
10
10²
10³ _{f (MHz)} 10⁴
I_C = 70 mA; V_CE = 10 V; T_amb = 25 °C.
Fig.21 Maximum unilateral power gain as a
function of frequency.
September 1995
10